CHA3513_15 Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – 6-18GHz 3 bit Digital Variable Amplifier

CHA3513
RoHS COMPLIANT
6-18GHz 3 bit Digital Variable Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3513 is composed by a three steps
digital attenuator followed by a three stage
travelling amplifier and a Single Pole Single
Through (SPST) switch. It is designed for _RF
defense applications. The backside of the _IN
chip is both RF and DC grounded. This helps
to simplify the assembly process.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
10A
5A
10A1 B C F G
RF
10dB 5dB 10dB
OUT
10B
5B 10B1 A D E
H
Typical on wafer Measurements
Gain versus attenuation states
Main Features
■ Performances: 6-18GHz
■ 20dBm saturated output power
■ 19 dB gain
■ 3 bit attenuator for 26dB range
■ DC power consumption, 300mA @ 4.5V
■ Chip size: 6.68 x 2.46 x 0.1mm
0dB state
5dB state
10dB state
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Min Typ Max Unit
Fop
Operating frequency range
6
18
GHz
G
Small signal gain @ Attenuator state 0dB
19
dB
Psat
Saturated Output power @ Attenuator state 0dB
20
dBm
ATT dyn
Attenuator range with 3bit
25
dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA3513-8144 - 23 May 08
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]