CHA3512_08 Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – 6-18GHz Low Noise Digital Variable Amplifier

CHA3512
RoHS COMPLIANT
6-18GHz Low Noise Digital Variable Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3512 is composed by a Single Pole
Double Through (SPDT) switch followed by a
one step digital attenuator and a double
stage travelling wave amplifier. It is designed
for defense applications. The backside of the
chip is both RF and DC grounded. This helps
to simplify the assembly process.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
Main Features
■ Performances: 6-18GHz
■ 23dBm saturated output power
■ 16dB gain
■ 1 bit attenuator for 20dB dynamic range
■ DC power consumption: 210mA @ 4.5V
■ Chip size: 4.27 x 2.46 x 0.1mm
0dB state
20dB state
Typical on wafer Measurements
Gain versus attenuation states
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Min Typ Max Unit
Fop
Operating frequency range
6
18
GHz
G
Small signal gain @ Attenuator state 0dB
16
dB
Psat Saturated Output power @ Attenuator state 0dB
23
dBm
ATT dyn
Attenuator range
20
dB
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions !
Ref. DSCHA3512-8144 - 23 May 08
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]