CHA3511_15 Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – GaAs Monolithic Microwave IC

6-18GHz Amplifier
CHA3511
RoHS COMPLIANT
GaAs Monolithic Microwave IC
Description
The CHA3511 is composed of a Single Pole
Single Through (SPST) switch followed by a
double stage travelling wave amplifier. It is
designed for defence, naval, or avionic
applications. The backside of the chip is
both RF and DC grounded. This helps to
simplify the assembly process.
RF IN
E2
AB
RF OUT
The circuit is manufactured with a Power
pHEMT process, 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
F
DC
It is available in chip form.
Main Features
Wide Band: 6-18GHz
16dB gain
39dB isolation
22 dBm saturated output power
DC power consumption, 190mA @ 4.5V
Chip size: 3.55 x 2.30 x 0.1mm
Main Characteristics
Typical on wafer Measurements
Gain versus switch states
30
20
10
0
-10
-20
-30
-40
-50
-60
2
4
6
8
10
12
14
16
18
20
Frequency GHz
Tamb. = 25°C
Symbol
Parameter
Fop Operating frequency range
G Small signal gain @ Switch on
ISO Delta Gain (1)
Psat Saturated Output power @Switch on
Min Typ Max Unit
6
18 GHz
15
16
dB
35
39
dB
20
22
dBm
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSCHA35110197 - 16 Jul 10
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]