CHA3511 Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – 6-18GHz Amplifier

6-18GHz Amplifier
CHA3511
RoHS COMPLIANT
GaAs Monolithic Microwave IC
Description
The CHA3511 is composed of a Single Pole
Single Through (SPST) switch followed by a
double stage travelling wave amplifier. It is
designed for defence, naval, or avionic
applications. The backside of the chip is
both RF and DC grounded. This helps to
simplify the assembly process.
RF IN
E2
AB
RF OUT
The circuit is manufactured with a Power-
HEMT process, 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
F
DC
It is available in chip form.
Main Features
■Wide Band: 6-18GHz
■16dB gain
■39dB isolation
■22 dBm saturated output power
■DC power consumption, 190mA@ 4.5V
■Chip size: 3.55 x 2.30 x 0.1 mm
Main Characteristics
Typical on wafer Measurements
Gain versus switch states
30
20
10
0
-10
-20
-30
-40
-50
-60
2
4
6
8
10
12
14
16
18
20
Frequency GHz
Tamb. = 25°C
Symbol
Fop
G
ISO
Psat
Parameter
Operating frequency range
Small signal gain @ Switch on
Delta Gain (1)
Saturated Output power @Switch on
Min
6
15
35
20
Typ
16
39
22
Max
18
Unit
GHz
dB
dB
dBm
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSCHA35116286 - 13 Oct 06
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]