CHA3397-QDG Datasheet, PDF (1/16 Pages) United Monolithic Semiconductors – 36-40.5GHz Medium Power Amplifier

CHA3397-QDG
36-40.5GHz Medium Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA3397-QDG is a 4 stage monolithic
medium power amplifier, which produces
21dB gain for 18dBm output power.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.15µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is supplied in RoHS compliant SMD
package.
UMS
A3397
YYWW
Main Features
■ Broadband performances: 36-40.5GHz
■ 18dBm Pout at 1dB compression
■ 21dB gain
■ 29dBm OTOI
■ DC bias: Vd= 4.0V, Id= 200mA
■ 24L-QFN4x4 (QDG)
■ MSL1
Sij versus Frequency
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
P-1dB Output Power @1dB comp.
OTOI 3^rd order Intercept point
Min Typ Max Unit
36.0
40.5 GHz
21
dB
18
dBm
29
dBm
Ref. : DSCHA3397QDG6113 - 22 Apr 16
1/16
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]