CHA3395-QDG_15 Datasheet, PDF (1/16 Pages) United Monolithic Semiconductors – 21-29.5GHz Medium Power Amplifier

CHA3395-QDG
21-29.5GHz Medium Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA3395-QDG is a 3 stage monolithic
medium power amplifier, which produces
24dB gain for 20dBm output power.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is supplied in RoHS compliant SMD
package.
U_MS
A^A3³6³68⁹78⁵A
Y_YY_YW_WW_W_G
Main Features
■ Broadband performances: 21-29.5GHz
■ 20dBm Pout at 1dB compression
■ 24dB gain
■ 32dBm OTOI
■ DC bias: Vd= 4.0V, Id= 180mA
■ 24L-QFN4x4 (QDG)
■ MSL1
Output Power & PAE versus Frequency
30
28
26
24
22
20
18
16
14
12
Psat P-1dB PAE sat
10
19 20 21 22 23 24 25 26 27 28 29 30
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
P-1dB Output Power @1dB comp.
OTOI 3^rd order Intercept point
Min Typ Max Unit
21.0
29.5 GHz
24
dB
20
dBm
32
dBm
Ref. : DSCHA3395-QDG5090 - 31 Mar 15
1/16
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]