CHA3218-99F_15 Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – 2-18GHz Low Noise Amplifier

CHA3218-99F
RoHS COMPLIANT
2-18GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3218-99F is a two stage very wide
band Low Noise Amplifier.
The wide frequency band associated to a 2dB
low noise figure makes this circuit very
versatile for very high performance systems.
It is designed for a wide range of applications,
from military to commercial communication
systems.
The circuit is manufactured with a pHEMT
process, 0.15µm gate length, via holes
through the substrate, air bridges and electron
beam gate lithography.
It is available in chip form.
Vg1 Vg2 Vd1 Vd2
IN
OUT
Main Features
■ Broadband performances: 2-18GHz
■ Noise figure : 2dB
■ Output power: 15dBm @ 1dBcomp
■ Linear gain: 24dB
■ High linearity: 25dBm
■ Quiescent bias point: Vd=4V, Id=120mA
■ Chip size 3.07x1.57x0.1mm
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
NF Noise Figure
Pout Output Power @1dB comp.
Min Typ Max Unit
2
18 GHz
24
dB
2
dB
15
dBm
Ref. : DSCHA32181157 - 06 Jun 11
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: [phone] - Fax: [phone]