CHA3093C Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – 20-40GHz Medium Power Amplifier

CHA3093c
20-40GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3093c is a high gain broadband four-
stage monolithic medium power amplifier. It is
designed for a wide range of applications, from
military to commercial communication
systems. The backside of the chip is both RF
and DC grounded. This helps simplify the
assembly process.
A B.I.T. ( Build In Test ) monitors a DC voltage
that is representative of the microwave output
power.
The circuit is manufactured with a PM-HEMT
process, 0.15µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
■ Broadband performances : 20-40GHz
■ 20dBm output power.
■ 22dB gain
■ Very good broadband input matching
■ On chip output power level DC detector
■ Low DC power consumption, 330mA @ 3.5V
■ Chip size : 0.83 X 1.72 X 0.10 mm
Vd1
Vd2,3,4
IN
OUT
Vg1 Vg2
Vg 3 Vg4
Vdet
30
20
10
0
-10
-20
-30
-40
15
Typical on wafer measurements :
S22
S11
20
25
30
35
40
45
50
FREQ (GHz)
Input Rloss : solid line & output Rloss : dash line.
Main Characteristics
Tamb. = 25°C
Parameter
Min Typ Max Unit
Fop Operating frequency range
G
Small signal gain
P03 Output power at 3dB gain compression
Id
Bias current
20
40
18
20
20
22
330
400
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
GHz
dB
dBm
mA
Ref. : DSCHA30932158 -07-June-02
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]