CHA3092_15 Datasheet, PDF (1/6 Pages) United Monolithic Semiconductors – 20-33GHz Medium Power Amplifier

CHA3092
RoHS COMPLIANT
20-33GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3092 is a high gain broadband four-
stage monolithic medium power amplifier. It is
designed for a wide range of applications, from
military to commercial communication
systems. The backside of the chip is both RF
and DC grounds. This helps simplify the
assembly process.
A B.I.T. ( Build In Test ) monitors a DC voltage
that is representative of the microwave output
power.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Vd1
Vd2,3,4
IN
DI
OUT
Vg1 Vg2
Vg3,4
Vdet
Typical on wafer measurements
Main Features
■ Broadband performances: 20-33GHz
■ 20dBm output power.
■ 22dB ±1.0dB gain
■ Very good broadband input matching
■ On chip output power level DC detector
■ Low DC power consumption, 300mA @ 3.5V
■ Chip size: 0.88 X 1.72 X 0.10mm
Input Rloss: solid line & output Rloss: dash line
Main Characteristics
Tamb. = 25°C
Symbol
Fop
G
Parameter
Operating frequency range
Small signal gain
P03
Output power at 3dB gain compression
Id_small signal Bias current
Min Typ Max Unit
20
33
GHz
20
22
dB
20
23
dBm
300
400
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. :DSCHA30920356 21-Dec.-00
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]