CHA3092RBF Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – 20-33GHz Medium Power Amplifier

CHA3092RBF
20-33GHz Medium Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
Main Features
The monolithic microwave IC (MMIC) in the
package is a high gain broadband four-
stage monolithic medium power amplifier. It
is designed for a wide range of applications,
from military to commercial communication
systems. The circuit is manufactured with a
standard PM-HEMT process: 0.25µm gate
length, via holes through the substrate, air
bridges and electron beam gate lithography.
■ Broad band performance: 20-33GHz
■ Gain = 20dB (typical)
■ Output power (P_-1dB): 19dBm (typical)
■ Return loss < -6dB
■ Low DC power consumption, 300mA
■ SMD leadless package
■ Dimensions: 5.08 x 5.08 x 0.97 mm³
It is supplied in a new SMD leadless chip
carrier.
SMD Package Dimensions
"Please note that PIN 1 is located in the lower left corner of the package (front-side view) for all SMD-type packages from United Monolithic Semiconductors.
It is indicated by a triangle on the package lid. Starting with PIN 1 the other pads are numbered counter-clockwise (front-side view). ATTENTION: The dot on
the backside of the package (i.e. side with metallic pads) is just for fabrication purposes and does NOT indicate the location of PIN
Ref. : DSCHA3092RBF2057 -26-Feb.-01-
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]