CHA3090-98F_15 Datasheet, PDF (1/12 Pages) United Monolithic Semiconductors – 81-86GHz Medium Power Amplifier

CHA3090-98F
81-86GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3090-98F is a three-stage
monolithic Medium Power Amplifier. This
circuit includes a power detector which
integrates a directional coupler, a detection
diode and a reference diode to be used in
differential mode.
It is dedicated to E-band telecommunication,
particularly well suited for the new generation
of high capacity Backhaul.
The circuit is manufactured with a pHEMT
process, 0.1µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form with BCB layer
protection.
Vd1
IN
Vg1
Vd2h
Vd3h
Vg3h
OUT
Vg2
Vg3b
Vd2b
Vd3b
Vdet
Vref
Dc
Functional diagram
Main Features
■ Broadband performances: 81-86GHz
■ 13dB linear gain
■ 17dBm power at 1dB compression
■ 20dB power detector dynamic range
■ BCB layer protection
■ DC bias: Vd=3.5V@Id=280mA
■ Chip size 3.36x1.78x0.07mm
22
20
18
16
14
12
10
8
6
79
Output Power (dBm) and Linear Gain (dB)
P-1dB
P-3dB
S21
80 81 82 83 84 85 86 87
Frequency (GHz)
24
22
20
18
16
14
12
10
8
88
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Min Typ Max Unit
Freq Frequency range
81
86 GHz
Gain Linear Gain
13
dB
P1dB Output Power @1dB comp.
17
dBm
Psat Saturated Output Power
19
dBm
Dr
Detection dynamic range (for output power
20
dB
detection up to Psat)
Ref. : DSCHA30903245 - 02 Sep 13
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]