CHA3024-99F_15 Datasheet, PDF (1/12 Pages) United Monolithic Semiconductors – 2-22GHz LNA with AGC

CHA3024-99F
2-22GHz LNA with AGC
GaAs Monolithic Microwave IC
Description
The CHA3024-99F is a distributed Low Noise
Amplifier with Adjustable Gain Control (AGC)
which operates between 2 and 22GHz.
It is designed for a wide range of
applications, such as electronic warfare, X
and Ku Point to Point Radio, and test
instrumentation.
The circuit is manufactured using a 0.15µm
gate length pHEMT process, with via holes
through the substrate, air bridges and optical
gate lithography.
The part is supplied as bare die and input
and output RF accesses are matched to 50
ohms.
Vd
Vg2
IN
OUT
Vg1
Main Features
■ Broadband performances: 2-22GHz
■ Typical Linear Gain: 15dB
■ Up to 30 dB adjustable gain with Vg2
■ P1dB: 18dBm
■ Psat: 20dBm
■ OIP3: 30dBm
■ Typical Noise Figure: 3dB
■ DC bias: Vd=5V@Id=100mA, Vg1=-0.3V
and Vg2=1.7V.
■ Chip dimensions: 3.04 x 1.73 x 0.1mm
Linear Gain, Noise Figure, Return Losses (dB)
20
15
10
5
0
-5
S11(dB)
-10
S22(dB)
S21(dB)
-15
NF(dB)
-20
-25
-30
0 2 4 6 8 10 12 14 16 18 20 22 24
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
NF Noise Figure
Pout Output Power @1dB comp.
Min Typ Max Unit
2
22 GHz
15
dB
3
dB
18
dBm
Ref. : DSCHA30244242 - 29 Aug 14
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]