CHA3023 Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – 1-18 GHz WIDE BAND AMPLIFIER

CHA3023
RoHS COMPLIANT
1-18 GHz WIDE BAND AMPLIFIER
GaAs Monolithic Microwave IC
Description
The CHA3023 is a travelling wave amplifier
using cascode FET. It is designed for a wide
range of applications.
The circuit is manufactured with a PHEMT
process of 0.25µm gate length, via holes
through the substrate and air bridges and it
is available in die form.
Main Features
■ Broadband performances : 1-18 GHz
■ 14dB gain
■ 3dB typical Low Noise Figure
■ ±0.7 dB gain flatness
■ Die size : 2.15 X 1.42 X 0.10 mm
15
10
dBS21
5
0
-5
-10
dBS11
-15
dBS22
-20
1 3 5 7 9 11 13 15 17 19
Frequency (GHz)
On wafer measurements
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Fop Operating frequency range
G Small signal Gain
NF Noise figure
Id Bias current
Min Typ Max Unit
1
18 GHz
12.5 14
4
dB
95
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
DSCHA30235263 - 20 sep 05
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]