CHA2693-QAG Datasheet, PDF (1/12 Pages) United Monolithic Semiconductors – 18-30GHz Low Noise Amplifier

CHA2693-QAG
RoHS COMPLIANT
18-30GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA2693-QAG is a two-stage wide band
monolithic low noise amplifier.
The circuit is manufactured with a standard P-
HEMT process : 0.25µm gate length, via holes
through the substrate, air bridges and electron
beam gate lithography.
It is supplied in ROHS compliant SMD package.
Main Features
■ Broadband performance 18-30GHz
■ 3.0dB noise figure, 18-26GHz
■ 13dB gain, ± 2.0dB gain flatness
■ Low DC power consumption.
■ 20dBm 3^rd order intercept point
■ 16L-QFN3x3 SMD package
CHA2693-QAG
( Vd=4V ; Id=45mA )
20
18
NF
dBS21
16
14
12
10
8
6
4
2
0
12 14 16 18 20 22 24 26 28 30 32 34
Frequency ( GHz )
Main Characteristics
Tamb = +25°C, Vd = +4.0V, Id = 45mA
Symbol
Parameter
NF
Noise figure, 18-26GHz
G
Gain
IP3 3rd order intercept point
Min Typ Max Unit
3.0
dB
10
13
dB
18
20
dBm
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA2693QAG6332 - 28 Nov 06
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: [phone] - Fax: [phone]