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CHA2411-QDG_15 Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – 20-25GHz Low Noise Amplifier
CHA2411-QDG
20-25GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA2411-QDG is a K-band low noise
amplifier providing 26dB gain with a noise
figure of 2.5dB from a single bias supply
+5V.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is supplied in RoHS compliant SMD
package.
UUMMSS
AA3264681781A
YYYYWWWWG
Main Features
■ Broadband performances: 20-25GHz
■ Excellent 2.5dB Noise figure
■ 26dB  2dB stable Gain vs Temperature
■ DC bias: Vd=5.0 Volt @ +I=43mA
■ 24L-QFN4x4 SMD leadless package
■ MSL1
Functional diagram
CHA2411QDG - Lot 1004GA S21(dB)
Gain versus frequency
30
-40°C
28
+25°C
26
+105°C
24
22
20
18
16
14
12
10
16
17
18
19
20
21
22
23
24
25
26
Frequency (GHz)
Main Characteristics
Tamb.= +25°C
Symbol
Parameter
Fop Frequency range
G
Linear Gain
NF Noise Figure
RLoss Input / Output Return Losses.
Min Typ Max Unit
20
25 GHz
22
26
30 dB
2.5
dB
15
dB
Ref. : DSCHA2411-QDG3021 – 21 Jan 13
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34