CHA2411-QDG Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – GaAs Monolithic Microwave IC In QFN package

CHA2411-QDG
RoHS COMPLIANT
20-25GHz LNA
GaAs Monolithic Microwave IC
In QFN package
Description
The CHA2411 is a monolithic Low
noise Amplifier in K band providing 26 dB gain
from a single bias supply +5V with a noise
figure of 2.5 dB. All the active devices are self
biased on chip.
The circuit is manufactured with a
standard GaAs PHEMT process: 0.25µm gate
length, via holes through the substrate, air
bridges and electron beam gate lithography.
The chip is delivered in a 24 Leads
RoHS compliant QFN4x4 package.
Main Features
n Excellent noise figure : 2.5 dB
n Stable gain vs temperature 26 ± 2dB
n Single supply : +5V
n Devices self biased on chip
n Standard SMD package : QFN 24L 4x4
Functional diagram
•
Plastic Package
Main Characteristics in QFN package
Tamb = +25°C
Parameters
Frequency range
Small signal Gain
SSB Noise figure
Input / Output Return Loss
Min
Typ
Max
Unit
20
25
GHz
22
26
30
dB
2.5
dB
15
dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA2411QDG6174 - 23 Jun 06
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]