CHA2394_06 Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – 36-40GHz Very Low Noise High Gain Amplifier

CHA2394
RoHS COMPLIANT
36-40GHz Very Low Noise High Gain Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2394 is a three-stage monolithic
low noise amplifier. It is designed for a wide
range of applications, from military to
commercial communication systems.
Vds
Vds
IN
The circuit is manufactured with a HEMT
OUT
process : 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
Vgs1&2 Vgs3
Main Features
■ Broadband performances : 36-40GHz
■ 2.5dB Noise Figure
■ 21dB gain
■ ±1.5dB gain flatness
■ Low DC power consumption, 60mA @
3.5V
■ Chip size : 1.72 X 1.08 X 0.10 mm
Typical on wafer measurements :
22
4
20
3,5
18
3
16
2,5
14
2
12
1,5
10
1
30 31 32 33 34 35 36 37 38 39 40
Frequency (GHz)
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Fop Operating frequency range
G Small signal gain
P1dB Output power at 1dB gain compression
NF Noise figure
Min Typ Max Unit
36
40 GHz
18
21
dB
8
12
dBm
2.5
3.0
dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA23946354 - 20 Dec 06
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]