CHA2391_15 Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – 36-40GHz Very Low Noise Amplifier

CHA2391
RoHS COMPLIANT
36-40GHz Very Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2391 is a two-stage wide band
monolithic low noise amplifier.
IN
The circuit is manufactured with a standard
pHEMT process: 0.25µm gate length, via
holes through the substrate, air bridges
and electron beam gate lithography.
It is supplied in chip form.
Vd
50
25
OUT
Vg 1 Vg 2
Main Features
■ Broad band performance 36-40GHz
■ 2.5dB noise figure, 36-40GHz
■ 15dB gain, ± 0.5dB gain flatness
■ Low DC power consumption, 50mA
■ 20dBm 3rd order intercept point
■ Chip size: 1.67 x 1.03 x 0.1mm
Main Characteristics
Tamb = +25°C
20
5
16
4
12
3
8
2
4
1
0
0
30 31 32 33 34 35 36 37 38 39 40
Frequency (GHz)
On wafer typical measurements
.
Symbol
Parameter
Min
Typ Max Unit
Fop Operating frequency range
36
40 GHz
NF Noise figure, 36-40GHz
2.5
3
dB
G
Gain
12
15
dB
P1dB Output power at 1dB gain compression
9
dBm
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA23912240 -28-Aug.-02
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]