CHA2295 Datasheet, PDF (1/7 Pages) United Monolithic Semiconductors – 6 - 11GHz Buffer Splitter Amplifier

CHA2295
6 - 11GHz Buffer Splitter Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2295 is a broadband buffer splitter
three-stage monolithic amplifier.
It is designed for a wide range of applications,
from military to commercial communication
systems. The backside of the chip is both RF
and DC grounds. This helps simplify the
assembly process.
IN
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
OUT 1
Vd
Vg
OUT 2
Main Features
■ Broadband performance : 6 -11GHz
■ 14dBm saturated output power.
■ 18dB ±1.5dB gain flatness
■ Good broadband matching
■ Low DC power consumption, 160mA @ 3.5V
■ Chip size : 2.26 X 1.33 X 0.10 mm
Main Characteristics
Tamb. = 25°C
Symbol
Fop
G
Parameter
Operating frequency range
Small signal gain
Psat
Saturated Output power
Id_small signal Bias current
Typical on wafer measurements : Gain (dB)
20
19
18
17
16
15
14
13
12
Gain channel 1
11
Gain channel 2
10
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
Min Typ Max Unit
6
11
GHz
15
18
dB
12
14
dBm
160
220
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA22952240 28-Aug.-02
1/7
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]