CHA2294 Datasheet, PDF (1/6 Pages) United Monolithic Semiconductors – 35-40GHz Low Noise, Variable Gain Amplifier

CHA2294
35-40GHz Low Noise, Variable Gain Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2294 is a high gain four-stage
monolithic low noise amplifier with variable gain.
It is designed for a wide range of applications,
from military to commercial communication
systems.The backside of the chip is both RF and
DC grounded. This helps simplify the assembly
IN
process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
26
24
• Frequency range : 35-40GHz
22
20
• 4.0dB Noise Figure.
18
16
• 22dB gain
14
12
• Gain control range: 15dB
10
• Low DC power consumption, 120mA @ 5V
8
6
• Chip size : 2.32 X 1.235 X 0.10 mm
4
2
0
35
Main Characteristics
Tamb. = 25°C
Parameter
V5
Vd2 Vd3,4
OUT
Vg1 Vg2 Vg3.4 Vc
Typical on wafer measurements :Gain & NF
Gain (dB)
NF (dB)
36
37
38
39
40
Frequency (GHz)
Min Typ Max Unit
Fop
G
NF
Gctrl
Id
Operating frequency range
Small signal gain
Noise figure
Gain control range with Vc variation
Bias current
35
40
22
4
15
120
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
GHz
dB
dB
dB
mA
Ref. : DSCHA22942183 -01-July-02
1/6
Specifications subject to change without notice
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