CHA2293 Datasheet, PDF (1/7 Pages) United Monolithic Semiconductors – 24.5-29.5GHz Low Noise, Variable Gain Amplifier

CHA2293
24.5-29.5GHz Low Noise, Variable Gain Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2293 is a high gain four-stage
monolithic low noise amplifier with variable gain.
It is designed for a wide range of applications,
from military to commercial communication
systems.The backside of the chip is both RF and
DC grounded. This helps simplify the assembly
process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
• Frequency range : 24.5-29.5GHz
• 3dB Noise Figure.
• 24dB gain
• Gain control range: 15dB
• Low DC power consumption, 160mA @ 5V
• Chip size : 2.32 X 1.23 X 0.10 mm
V5
Vd
Vg1
Vg
Vc
Typical on wafer measurements :Gain & NF
28
26
24
Gain (dB)
22
20
18
16
14
12
10
8
6
4
NF (dB)
2
0
24
25
26
27
28
29
30
Frequency (GHz)
Main Characteristics
Tamb. = 25°C
Parameter
Min Typ Max Unit
Fop
G
NF
Gctrl
Id
Operating frequency range
Small signal gain
Noise figure
Gain control range with Vc variation
Bias current
24.5
29.5 GHz
24
dB
3
3.5
dB
15
dB
150
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA22931201 -20-July-01
1/7
Specifications subject to change without notice
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