CHA2292_15 Datasheet, PDF (1/6 Pages) United Monolithic Semiconductors – 16-24GHz Low Noise, Variable Gain Amplifier

CHA2292
RoHS COMPLIANT
16-24GHz Low Noise, Variable Gain Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2292 is a high gain four-stage
monolithic low noise amplifier with variable gain.
It is designed for a wide range of applications,
from military to commercial communication
systems.The backside of the chip is both RF and
DC grounded. This helps simplify the assembly
process.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Typical on wafer measurements: Gain & NF
Main Features
Frequency range: 16-24GHz
2.8dB Noise Figure.
25dB Gain
15dB Gain control range
DC power consumption: 160mA @ 5V
Chip size: 2.32 X 1.23 X 0.10mm
Main Characteristics
Tamb. = 25°
30
28
26
Gain (dB)
24
22
20
18
16
14
12
10
8
6
4
NF (dB)
2
0
16
17
18
19
20
21
22
23
24
Frequency (GHz)
Symbol
Parameter
Fop Operating frequency range
G
Small signal gain
NF Noise figure
Gctrl
Id
Gain control range with Vc variation
Bias current
Min Typ Max Unit
16
24
GHz
24
26
dB
2.8
3.5
dB
15
20
dB
160
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA22927150 - 20 May 07
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]