CHA2291 Datasheet, PDF (1/6 Pages) United Monolithic Semiconductors – 10-18GHz Low Noise, Variable Gain Amplifier

CHA2291
10-18GHz Low Noise, Variable Gain Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2291 is a high gain four-stage
monolithic low noise amplifier with variable gain.
It is designed for a wide range of applications,
from military to commercial communication
systems.The backside of the chip is both RF and
DC grounded. This helps simplify the assembly
process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
V5
Vd2,3,4
Vg1 Vg2 Vg3,4 Vc
Typical on wafer measurements : Gain & NF
Main Features
• Frequency range : 10-18GHz
• 2.2dB Noise Figure.
• 23dB gain
• Gain control range: 20dB
• DC power consumption: 180mA @ 5V
• Chip size : 2.49 X 1.23 X 0.10 mm
Main Characteristics
Tamb. = 25°C
Parameter
26
Gain (dB)
24
22
20
18
16
14
12
10
8
6
4
NF (dB)
2
0
10
11
12
13
14
15
16
17
18
Frequency (GHz)
Min Typ Max Unit
Fop Operating frequency range
G
Small signal gain
10
18
23
NF Noise figure
2.2
Gctrl Gain control range with Vc variation
20
Id
Bias current
180
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
GHz
dB
dB
dB
mA
Ref. : DSCHA22912149 - 29-May-021
1/6
Specifications subject to change without notice
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