CHA2290 Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – 10-18GHz Low Noise, Variable Gain Amplifier

CHA2290
RoHS COMPLIANT
10-18GHz Low Noise, Variable Gain Amplifier
GaAs Monolithic Microwave IC
Description
V5 VD1
VD234
The CHA2290 is a high gain four-stage
monolithic low noise amplifier with variable gain.
It is designed for a wide range of applications,
from military to commercial communication
systems. The backside of the chip is both RF
and DC grounded. This helps to simplify the
assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
VG1 VG2 VG34 VC
Typical on wafer measurements : Gain & NF
Main Features
28
26
24
• Frequency range : 10 -18GHz
22
20
• 2.2dB Noise Figure.
18
• 25dB gain
16
14
• Gain control range: 25dB
12
10
• DC power consumption: 180mA @ 5V
8
6
• Chip size : 2.49 X 1.23 X 0.10 mm
4
2
0
10
Gain
(dB)
NF
(dB)
12
14
16
18
20
Frequency (GHz)
Main Characteristics
Tamb. = 25°C
Parameter
Min Typ Max
Fop Operating frequency range
10
18
G
Small signal gain
25
NF
Noise figure
2.2
Gctrl Gain control range with Vc variation
20
Id
Bias current
180
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Unit
GHz
dB
dB
dB
mA
Ref. : DSCHA22906193 - 11 jul 06
1/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: [phone] - Fax : [phone]