CHA2266_15 Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – GaAs Monolithic Microwave IC

CHA2266
RoHS COMPLIANT
12.5-17GHz Low-Noise Driver Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2266 is a self biased, low-noise
VD 1
VD 2
high gain driver amplifier. It is designed
mainly for VSAT applications in Ku-
band. The backside of the chip is both RF
and DC grounded. This helps to simplify
IN
OUT
the assembly process.
The circuit is manufactured on a standard
GaAs pHEMT process, with via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
Main Features
Broadband performance 12.5–17GHz
2.5dB noise figure
34dB gain, +/- 0.5dB gain flatness
Low DC power consumption:130mA
Saturated output power : 16dBm
Chip size 2.32 x 1.02 x 0.1mm
( Vds = 4V, Ids = 130mA )
40
35
30
25
20
15
MS11 MS21 MS22 NF
10
5
4,1 _{2,9 2,5 2,0 1,9 1,6 1,5 1,5} 2,2
0
-5
-10
-15
-20
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Frequency / GHz
Main Characteristics
Tamb=+25°C
Symbol
Parameter
Fop
G
NF
P1dB
Operating frequency range
Small signal gain
Noise Figure
Output power at 1 dB gain
compression
Min
Typ
Max
12.5
17
31
34
2.5
3
14.5
Unit
GHz
dB
dB
dBm
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA22667082- 23 Mar 07
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]