CHA2266_07 Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – 12.5-17GHz Low-Noise Driver Amplifier

CHA2266
RoHS COMPLIANT
12.5-17GHz Low-Noise Driver Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2266 is a self biased, low-noise high
gain driver amplifier. It is designed mainly for
VSAT applications in Ku-band. The backside of
the chip is both RF and DC grounded. This
helps to simplify the assembly process.
IN
The circuit is manufactured on a standard GaAs
PHEMT process, with via holes through the
substrate, air bridges and electron beam gate
lithography.
VD 1
VD 2
OUT
Main Features
• Broad band performance 12.5–17GHz
• 2.5dB noise figure
• 34dB gain, +/- 0.5dB gain flatness
• Low DC power consumption:130mA
• Saturated output power : 16dBm
• Chip size 2.32 x 1.02 x 0.1mm
Main Characteristics
Tamb=+25°C
Typical on wafer measurements
( Vds = 4V, Ids = 130mA )
40
35
30
25
20
15
MS11
MS21
MS22
NF
10
5
4,1 _{2,9 2,5 2,0 1,9 1,6 1,5 1,5} 2,2
0
-5
-10
-15
-20
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Frequency / GHz
Symbol
Parameter
Min
Fop Operating frequency range
12.5
G
Small signal gain
31
NF Noise Figure
P1dB Output power at 1 dB gain
compression
Typ
Max
Unit
17
GHz
34
dB
2.5
3
dB
14.5
dBm
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA22667082- 23 Mar 07
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]