CHA2266 Datasheet, PDF (1/7 Pages) United Monolithic Semiconductors – 12.5-17GHz Low-Noise Driver Amplifier

CHA2266
12.5-17GHz Low-Noise Driver Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2266 is a self biased, low-noise high
gain driver amplifier. It is designed mainly for
VSAT applications in Ku-band. The backside of
the chip is both RF and DC grounded. This
helps to simplify the assembly process.
IN
The circuit is manufactured on a standard GaAs
PHEMT process, with via holes through the
substrate, air bridges and electron beam gate
lithography.
VD 1
VD 2
OUT
Main Features
• Broad band performance 12.5–17GHz
• 2.5dB noise figure
• 34dB gain, +/- 0.5dB gain flatness
• Low DC power consumption:130mA
• Saturated output power : 16dBm
• Chip size 2.32 x 1.02 x 0.1mm
Absolute maximum Ratings (1)
Typical on wafer measurements
Typical CHA2266
( Vds = 4V, Ids = 130mA )
40
35
30
25
20
15
MS11 MS21 MS22 NF
10
5
4.1 _{2.9 2.5 2.0 1.9 1.6 1.5 1.5} 2.2
0
-5
-10
-15
-20
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Frequency / GHz
Symbol
Parameter (1)
Vd
Drain bias voltage
Pin Maximum continious input power overdrive
Top Operating temperature range
Tstg Storage temperature
Values
4.3
-15
-40 to +85
-55 to +125
Unit
V
dBm
°C
°C
(1) Operation of this device above any of these parameters may cause permanent damage.
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA22662242 - 30-Aug.-02
1/7
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]