CHA2260-QAG_15 Datasheet, PDF (1/14 Pages) United Monolithic Semiconductors – 18-27GHz Low Noise Amplifier

CHA2260-QAG
18-27GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA2260-QAG is a low noise amplifier
monolithic circuit, which integrates 3-stages
self biased.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length.
It is supplied in RoHS compliant SMD
package.
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Main Features
■ Broadband performance: 18-27GHz
■ 26dB Gain
■ 2.2dB Noise Figure
■ 13dBm Pout
■ 23dBm Output IP3
■ DC bias: Vd=3.5Volt@Id=65mA
■ 16L-QFN3x3
■ MSL1
Noise Figure
3.2
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
3.0 V
3.5 V
1.2
20 21 22 23 24 25 26 27 28 29 30
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
NF Noise Figure
Pout Output Power @1dB comp.
Min Typ Max Unit
18
27 GHz
26
dB
2.2
dB
13
dBm
Ref. : DSCHA2260-QAG3150 - 30 May 13
1/14
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]