CHA2193_15 Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – 20-30GHz Low Noise Amplifier

CHA2193
RoHS COMPLIANT
20-30GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2193 is a three stages low noise
amplifier. It is designed for a wide range of
applications, from military to commercial
communication systems. The backside of the
chip is both RF and DC grounds. This helps
simplify the assembly process.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
■ 2.0 dB noise figure
■ 18 dB ± 1dB gain
■ 8 dBm output power (-1dB gain comp.)
■ Very good broadband input matching
■ DC power consumption, 60mA @ 3.5V
■ Chip size : 2.07 x 1.03 x 0.10 mm
20
18
Gain (dB)
16
14
12
10
8
6
4
NF (dB)
2
0
20 21 22 23 24 25 26 27 28 29 30 31 32 33
Frequency ( GHz )
Typical on Wafer Measurements
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Min
Fop Operating frequency range
20
G
Small signal gain
16
NF Noise figure
P1dB Output power at 1dB gain compression
6
Id
Bias current
Typ Max Unit
30
GHz
18
dB
2.0
2.5
dB
8
dBm
60
100
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA21939042-11 Feb 99
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]