CHA2159_15 Datasheet, PDF (1/6 Pages) United Monolithic Semiconductors – 55-65GHz Low Noise / Medium Power Amplifier

CHA2159
RoHS COMPLIANT
55-65GHz Low Noise / Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2159 is a four - stage low noise and
medium power amplifier. It is designed for a wide
range of applications, from military to
commercial communication systems. The
backside of the chip is both RF and DC
grounded. This simplifies the assembly process.
The circuit is manufactured with a pHEMT
process, 0.15µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is supplied in chip form.
Main Features
■ 4.0 dB noise figure
■ 20 dB gain
■ 14 dBm output power (-1dB gain comp.)
■ DC power consumption, 115mA @ 3.5V
■ Chip size: 2.35 x 1.11 x 0.10 mm
22
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
-12
-14
55
dBS11
dBS22
dBS21
NF Ty p.
60
65
Frequency (GHz)
Typical on Wafer Measurements
Main Characteristics
Tamb = +25°C, Vd = 3.5V
Symbol
Fop
G
NF
P1dB
Id
Parameter
Operating frequency range
Small signal gain
Noise figure
Output power at 1dB gain compression
Bias current
Min Typ Max
55
65
18
20
4.0
4.8
13
14
115
150
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Unit
GHz
dB
dB
dBm
mA
Ref. : DSCHA21597262 - 19 Sep 07
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]