CHA2110-QDG Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – 7-12 GHz LNA

CHA2110-QDG
7-12 GHz LNA
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA2110-QDG is a monolithic
two-stage wide band, self-biased Low Noise
Amplifier.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, and air bridges.
It is supplied in RoHS compliant SMD
package.
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Main Features
■ Broadband performances: 7-12GHz
■ Linear gain: 19dB
■ Noise Figure: 1.2dB
■ Output power @ 1dB comp.: 10dBm
■ DC bias: Vd=4V @ Id=45mA
■ 24L-QFN4x4
■ MSL1
25
20
S21
5.5
5.0
15
4.5
10
4.0
5
3.5
0
3.0
-5 _S22
S11
2.5
-10
2.0
-15
1.5
-20
NF
1.0
-25
0.5
-30
0.0
4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
Typical gain, input return losses, output
return losses and Noise Figure (dB)
versus frequency
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
NF Noise Figure
Pout Output Power @1dB comp. (Freq.=10GHz)
Min Typ Max Unit
7
12 GHz
19
dB
1.2
dB
10
dBm
Ref. : DSCHA2110-QDG6159 - 07 Jun 16
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]