CHA2110-98F_15 Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – 7-12GHz LNA

CHA2110-98F
7-12GHz LNA
GaAs Monolithic Microwave IC
Description
The CHA2110-98F is a monolithic two-stages
wide band low noise amplifier circuit. It is
self-biased.
It is designed for military, space and
telecommunication systems.
VD1 VD2
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
IN
through the substrate, and air bridges.
OUT
It is available in chip form.
Main Features
■ Broadband performances: 7-12GHz
■ Linear gain: 19dB
■ Return Losses: 12dB
■ Noise Figure: 1.2dB
■ Output power @ 1dBcomp: 11dBm
■ DC bias: Vd=4 Volt@Id=45mA
■ Chip size 1.93x1.3x0.1mm
25
5.0
24
4.5
23
4.0
22
3.5
21
3.0
20 ^S21
2.5
19
2.0
18
1.5
17
NF
1.0
16
0.5
15
0.0
7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0
Frequency (GHz)
Gain and NF versus frequency
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
NF Noise Figure
Pout Output Power @1dB comp (f=10GHz)
Min Typ Max Unit
7
12 GHz
19
dB
1.2
dB
11
dBm
Ref. : DSCHA21102181 - 29 Jun 12
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]