CHA2098RBF Datasheet, PDF (1/6 Pages) United Monolithic Semiconductors – 20-33GHz High Gain Buffer Amplifier

CHA2098RBF
20-33GHz High Gain Buffer Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The monolithic microwave IC (MMIC) in the
package is a high gain broadband three-
stage monolithic buffer amplifier. It is
designed for a wide range of applications,
from military to commercial communication
systems. The circuit is manufactured with a
PM-HEMT process, 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is supplied in a new SMD leadless chip
carrier.
Main Features
■ Broadband performance: 20-40GHz
■ Small signal gain 18dB (typical)
■ SMD leadless package
■ Pout-1dB : +15dBm (typical).
■ Dimensions: 5.08 x 5.08 x 0.97 mm³
SMD Package Dimensions
"Please note that PIN 1 is located in the lower left corner of the package (front-side view) for all SMD-type packages from United Monolithic Semiconductors. It is indicated
by a triangle on the package lid. Starting with PIN 1 the other pads are numbered counter-clockwise (front-side view). ATTENTION: The dot on the backside of the
package (i.e. side with metallic pads) is just for fabrication purposes and does NOT indicate the location of PIN
Ref. : DSCHA2098RBF2057 -26-Feb.-02
1/6
Specifications subject to change without notice
1."
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]