CHA2098B_15 Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – 20-40GHz High Gain Buffer Amplifier

CHA2098b
RoHS COMPLIANT
20-40GHz High Gain Buffer Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2098b is a high gain broadband three-
stage monolithic buffer amplifier. It is designed
for a wide range of applications, from military to
commercial communication systems. The
backside of the chip is both RF and DC grounds.
This helps simplify the assembly process.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
■ Broadband performances: 20-40GHz
■ 16dBm output power (1dB gain comp)
■ 19dB ±1.5dB gain
■ Low DC power consumption, 150mA @ 3.5V
■ Chip size: 1.67 X 0.97 X 0.10mm
Vd1 Vd2,3
IN
OUT
Vg1 Vg2 Vg3
Typical on-wafer results
25
15
Gain
5
-5
OUT
-15
IN
-25
10 15 20 25 30 35 40 45
Frequency ( GHz )
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Fop Operating frequency range
G
Small signal gain
P1dB Output power at 1dB gain compression
Id
Bias current
Min Typ Max
20
40
17
19
13
16
150
200
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Unit
GHz
dB
dBm
mA
Ref. : DSCHA20981233-21 Aug 01
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]