CHA2095A Datasheet, PDF (1/7 Pages) United Monolithic Semiconductors – 36-40GHz Low Noise Very High Gain Amplifier

CHA2095a
36-40GHz Low Noise Very High Gain Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2095a is a four-stage monolithic low
noise amplifier. It is designed for a wide range
of applications, from military to commercial
communication systems.
The circuit is manufactured with a HEMT
process : 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
¦ Broadband performances
¦ 3.5dB Noise Figure
¦ 26dB gain
¦ ±1.0dB gain flatness
¦ Low DC power consumption, 90mA @ 3.5V
¦ Chip size : 2.07 X 1.11 X 0.10 mm
Vd Vd
In
Out
Vg 1,2
Vg 3,4
Typical on wafer measurements :
30
25
20
15
10
5
0
30
35
40
45
50
Frequency (GHz)
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Fop Operating frequency range
G
Small signal gain
P1dB Output power at 1dB gain compression
NF Noise figure
Min Typ Max Unit
36
40
GHz
22
26
dB
8
10
dBm
3.5
4.0
dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA20958147
1/7
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]