CHA2094B_15 Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – 36-40GHz Low Noise High Gain Amplifier

CHA2094b
RoHS COMPLIANT
36-40GHz Low Noise High Gain Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2094 is a three-stage monolithic low
noise amplifier. It is designed for a wide range of
applications, from military to commercial
communication systems.
Vds
Vds
The circuit is manufactured with a pHEMT
IN
process: 0.25µm gate length, via holes through
OUT
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Vgs1&2 Vgs3
Main Features
■ Broadband performances: 36-40GHz
■ 3.0dB Noise Figure
■ 21dB gain
■ ±1.5dB gain flatness
■ Low DC power consumption, 60mA @ 3.5V
■ Chip size: 1.72 X 1.08 X 0.10 mm
Typical on wafer measurements :
24
20
16
12
8
4
0
34 35 36 37 38 39 40 41 42
Frequency (GHz)
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Fop Operating frequency range
G
Small signal gain
P1dB Output power at 1dB gain compression
NF Noise figure
Min Typ Max
36
40
18
21
5
8
3.0
4.0
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Unit
GHz
dB
dBm
dB
Ref. : DSCHA20949312 – 08-Nov.-99
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]