CHA2093_03 Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – 20-30GHz Low Noise Amplifier

CHA2093
RoHS COMPLIANT
20-30GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2093 is a two-stage wide band
monolithic low noise amplifier.
The circuit is manufactured with a standard
IN
HEMT process : 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is supplied in chip form.
Vd
50
25
OUT
Vg 1 Vg 2
Main Features
¦ Broad band performance 20-30GHz
¦ 2.2dB noise figure, 20-30GHz
¦ 15dB gain, ± 0.5dB gain flatness
¦ Low DC power consumption, 50mA
¦ 20dBm 3rd order intercept point
¦ Chip size : 1.67 x 1.03 x 0.1mm
Main Characteristics
Tamb = +25°C
20
10
18
9
16
8
14
7
12
6
10
5
8
4
6
3
4
2
2
1
0
0
10
15
20
25
30
35
40
Frequency ( GHz )
On wafer typical measurements.
Symbol
Parameter
NF
Noise figure, 20-30GHz
G
Gain
∆G Gain flatness
Min Typ Max Unit
2.2 3.0 dB
13
15
dB
± 0.5 ± 1.0 dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA20933279 - 06 Oct 03
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]