CHA2092B_15 Datasheet, PDF (1/6 Pages) United Monolithic Semiconductors – 18-32GHz Low Noise Amplifier

CHA2092b
RoHS COMPLIANT
18-32GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2092 is a high gain broadband three-
stage monolithic low noise amplifier. It is
designed for a wide range of applications, from
military to commercial communication
systems. The backside of the chip is both RF
and DC ground. This helps simplify the assembly
process. Self biasing technique is implemented
on chip to ease the circuit biasing.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
■ Broadband performances: 18-32GHz
■ 2.5dB Noise Figure
■ 10dBm output power (-1dB gain comp.)
■ 22dB ±1.0dB gain
■ Low DC power consumption, 60mA @ 3.5V
■ Chip size: 1.67 X 0.97 X 0.10mm
Vds
IN
Vgs1
OUT
8831
Vgs2,3
30
25
20
15
10
5
0
15 17 19 21 23 25 27 29 31 33 35
Frequency (GHz)
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Fop Operating frequency range
G
Small signal gain
NF Noise figure (20-32GHz)
P1dB Output power at 1dB gain compression
Id
Bias current
Min Typ Max Unit
18
32
GHz
17
22
dB
2.5
3.5
dB
8
10
dBm
60
100
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA20921233 21-August-01
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]