CHA2091_15 Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – 36-40GHz Low Noise Amplifier

CHA2091
RoHS COMPLIANT
36-40GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2091 is a two-stage wide band
monolithic low noise amplifier.
The circuit is manufactured with a standard
pHEMT process: 0.25µm gate length, via
holes through the substrate, air bridges
and electron beam gate lithography.
It is supplied in chip form.
Main Features
■ Broad band performance 36-40GHz
■ 2.5dB noise figure, 36-40GHz
■ 14dB gain, ± 0.5dB gain flatness
■ Low DC power consumption, 45mA
■ 20dBm 3rd order intercept point
■ Chip size: 1,67 x 1,03 x 0.1mm
Main Characteristics
Tamb = +25°C
20
10
18
9
16
8
14
7
12
6
10
5
8
4
6
3
4
2
2
1
0
0
20
25
30
35
40
45
50
Frequency ( GHz )
On wafer typical measurements.
Symbol
Parameter
NF Noise figure, 36-40GHz
G
Gain
∆G
Gain flatness
Min Typ Max Unit
2.5 4.0 dB
12
14
dB
± 0.5 ± 1.0 dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA20917150 - 30 May 07
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]