CHA2090_15 Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – GaAs Monolithic Microwave IC

CHA2090
RoHS COMPLIANT
17-24GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2090 is a three-stage self-biased
wide band monolithic low noise amplifier.
The circuit is manufactured with a standard
0.25µm gate length pHEMT process, via
holes through the substrate, air bridges
and electron beam gate lithography.
It is supplied in chip form.
Main Features
Broadband performance 17-24GHz
2.0dB noise figure
23dB gain, ± 1dB gain flatness
Low DC power consumption, 55mA
Chip size:
2,17 x 1,27 x 0.1mm
30
12
25
10
20
8
15
6
10
4
5
2
0
0
5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35
Frequency ( GHz )
On wafer typical measurements
Main Characteristics
Tamb = +25°C, Vd=4.5V, Pads B,D,E=GND
Symbol
Parameter
Min Typ Max
Fop Operating frequency range
17
24
NF Noise figure
2.0 3.0
G
Gain
19
23
VSWRin Input VSWR
2:1
VSWRout Output VSWR
2:1
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Unit
GHz
dB
dB
Ref. : DSCHA20909347-13 Dec 99
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]