CHA2080-98F_15 Datasheet, PDF (1/12 Pages) United Monolithic Semiconductors – 71-86GHz Low Noise Amplifier

CHA2080-98F
71-86GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2080-98F is a Low Noise Amplifier
with variable gain. This circuit integrates four
stages and provides 3.5dB Noise Figure
associated to 22dB Gain and +10dBm
Output Power at 1dB compression.
This amplifier is dedicated to
telecommunication, particularly well suited for
the two main E-Bands used in new
generation of High Capacity Backhaul.
It is manufactured with a pHEMT process,
0.1µm gate length, via holes through the
substrate, air bridges, electron beam gate
lithography and is available in chip form with
BCB Layer protection.
Functional diagram
Main Features
■ Broadband performances: 71-86GHz
■ Very low Noise Figure: 3.5dB
■ High Gain: 22dB
■ Dynamic Gain control: 12dB
■ 10dBm Pout@1dB compression
■ BCB Layer protection
■ DC bias: Vd=3.5Volt@Id=75mA
■ Chip size 3.35x1.12x0.07mm
28
24
20
16
12
8
4
0
65
70
75
80
85
90
Frequency (GHz)
Typical Linear gain and Noise Figure
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
NF Noise Figure
Pout Output Power @1dB compression
Min Typ Max Unit
71
86 GHz
22
dB
3.5
dB
10
dBm
Ref. : DSCHA20802355 - 20 Dec 12
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]