CHA2069RAF Datasheet, PDF (1/7 Pages) United Monolithic Semiconductors – 18-31GHz Low Noise Amplifier

CHA2069RAF
18-31GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The monolithic microwave IC (MMIC) in the
package is a three-stage self biased wide
band monolithic low noise amplifier.
The MMIC is manufactured with a standard
PM-HEMT process: 0.25µm gate length,
via holes through the substrate, air bridges
and electron beam gate lithography.
It is supplied in a new SMD leadless chip
carrier.
SMD Package Dimensions
Main Features
■ Broad band performance: 18-31GHz
■ Gain = 21dB (typical)
■ Noise Figure 3.0 dB (typical for f<26GHz)
■ Return loss < -6dB
■ SMD leadless package
■ Dimensions: 5.08 x 5.08 x 0.97 mm³
Please note that PIN 1 is located in the lower left corner of the package (front-side view) for all SMD-type packages from United Monolithic
Semiconductors. It is indicated by a triangle on the package lid. Starting with PIN 1 the other pads are numbered counter-clockwise (front-side view).
ATTENTION: The dot on the backside of the package (i.e. side with metallic pads) is just for fabrication purposes and does NOT indicate the
location of PIN 1.
Ref. : DSCHA2069RAF2169 -18-June-02-
1/7
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]