CHA2069-QDG Datasheet, PDF (1/18 Pages) United Monolithic Semiconductors – 18-30GHz Low Noise Amplifier

CHA2069-QDG
RoHS COMPLIANT
18-30GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA2069-QDG is a three-stage self-
biased wide band monolithic low noise
amplifier. Typical applications range from
telecommunication (point to point, point to multi-
point, VSAT) to ISM and military markets.
The circuit is manufactured with a standard
pHEMT process: 0.25µm gate length, via holes
through the substrate, air bridges and electron
beam gate lithography.
It is supplied in lead-free SMD package.
Main Features
■ Broadband performance 18-30GHz
■ 3dB noise figure
■ 20dB gain
■ 65 mA Low DC power consumption.
■ 20dBm 3^rd order intercept point (high current
configuration).
■ 24L-QFN4x4 SMD package
Gain and NF @ high current config. (BCF grounded)
24
22
20
Gain
18
16
14
12
10
8
6
NF
4
2
0
10 12 14 16 18 20 22 24 26 28 30 32
Frequency (GHz)
Main Characteristics
Tamb = +25°C, Vd = +4,5V Pads: VgB, VgC, VgF=GND (H igh current configuration)
Symbol
Parameter
Min Typ Max Unit
NF
Noise figure, 18-26GHz
3
4
dB
G
Gain
17
20
3rd order intercept point (Pout/tone=-5dBm)
IP3
18-26 GHz
18
20
dB
dBm
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHA2069QDG6332 - 28 Nov 06
1/18
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: [phone] - Fax: [phone]