CHA2069-99F_15 Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – 18-31GHz Low Noise Amplifier

CHA2069-99F
18-31GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The circuit is a three-stage self biased wide
band monolithic low noise amplifier.
The circuit is manufactured with a standard
pHEMT process: 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is supplied in chip form.
Main Features
■ Broad band performance 16-31GHz
■ 2.5dB noise figure
■ 22dB gain,  1dB gain flatness
■ Low DC power consumption, 55mA
■ 20dBm 3rd order intercept point
■ Chip size : 2,170 x 1,270x 0.1mm
24
22
20
18
16
14
12
10
8
6
4
2
0
14 16 18 20 22 24 26 28 30 32 34
Frequency ( GHz )
On wafer typical measurements.
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
NF
Noise figure,18-31GHz
G
Gain
G
Gain flatness
Min Typ Max Unit
2.5
3.5 dB
18
22
dB
 1  1.5 dB
Ref. : DSCHA20693246 - 03 Sep 13
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]