CHA2066 Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – 10-16GHz Low Noise Amplifier

CHA2066
10-16GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2066 is a two-stage wide band
monolithic low noise amplifier.
The circuit is manufactured with a standard
HEMT process : 0.25µm gate length, via
holes through the substrate, air bridges
and electron beam gate lithography.
It is supplied in chip form.
G1
7272
NC G2 Vd
RFin
RFout
UMS
A
B C D E NC
Main Features
■ Broad band performance 10-16GHz
■ 2.0dB noise figure, 10-16GHz
■ 16dB gain, ± 0.5dB gain flatness
■ Low DC power consumption, 50mA
■ 20dBm 3rd order intercept point
■ Chip size : 1,52 x 1,08 x 0.1mm
Main Characteristics
Tamb = +25°C
20
5
18
16
4
14
12
3
10
8
2
6
4
1
2
0
0
7 8 9 10 11 12 13 14 15 16 17 18 19 20
Frequency ( GHz )
On wafer typical measurements.
Symbol
Parameter
NF Noise figure, 10-16GHz
G
Gain
∆G
Gain flatness
Min Typ Max Unit
2.0 2.5 dB
14
16
dB
± 0.5 ± 1.0 dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA20661257 -14-Sept-01
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]