CHA2066-QAG Datasheet, PDF (1/12 Pages) United Monolithic Semiconductors – 10-16GHz Low Noise Amplifier

CHA2066-QAG
RoHS COMPLIANT
10-16GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA2066-QAG is a two-stage wide band
monolithic low noise amplifier. Typical
applications range from telecommunication
(point to point, point to multi-point, VSAT) to
ISM and military markets.
The circuit is manufactured with a standard P-
HEMT process: 0.25µm gate length, via holes
through the substrate, air bridges and electron
beam gate lithography.
It is supplied in lead-free SMD package.
Main Features
■ Broadband performance 10-16GHz
■ 2.5dB noise figure, 10-16GHz (BD)
■ 16dB gain, ± 1.5dB gain flatness
■ Low DC power consumption.
■ 20dBm 3^rd order intercept point (BE)
■ 16L-QFN3x3 SMD package
(BD & BE refer to biasing conditions)
20
18
16
14
12
10
8
6
4
2
0
8
CHA2066-QAG ( low current )
Gain dB
NF
9 10 11 12 13 14 15 16 17 18
Frequency ( GHz )
Main Characteristics
Tamb = +25°C
Symbol
Parameter
NF
Noise figure, 10-16GHz (BD)
G
Gain
IP3 3rd order intercept point (BE)
Min Typ Max Unit
2.5 3.0 dB
14
16
dB
20
21
dBm
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. DSCHA2066QAG6332 - 28 Nov 06
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: [phone] - Fax: [phone]