CHA2063A Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – 7-13GHz Low Noise Amplifier

CHA2063a
7-13GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2063a is a two-stage wide band
monolithic low noise amplifier.
The circuit is manufactured with a
PM-HEMT process : 0.25µm gate length,
via holes through the substrate, air bridges
and electron beam gate lithography.
It is supplied in chip form or in an hermetic
leadless ceramic package.
Main Features
■ Broad band performance 7-13GHz
■ 2.0dB noise figure, 8-13GHz
■ 19dB gain
■ Low DC power consumption, 40mA
■ 18dBm 3rd order intercept point
■ Chip size : 1,52 x 1,27 x 0.1mm
Pin Out
1 - NC
2 - NC
3 - RF output
4 - NC
5 - Vdd
6 - RF input
Main Characteristics
Tamb = +25°C, package form
Symbol
NF
G
Parameter
Noise figure, 7-8GHz
Noise figure, 8-13GHz
Gain
∆G
Gain flatness
Min Typ Max Unit
2.5
2.0
3.0
2.5
dB
16
19
dB
± 2.0
dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA20630096 -05-Apr-00
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]