CHA1077A Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – W-band Low Noise Amplifier

CHA1077a
RoHS COMPLIANT
W-band Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA1077a is a W-band monolithic 3-
stages low noise amplifier. All the active
devices are internally self-biased. This chip is
compatible with automatic equipment for
assembly.
The circuit is manufactured on P-HEMT
process: 0.15µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
W-band low noise amplifier
High gain
Wide operating frequency range
High temperature range
On-chip self biasing
Additional external resistor allows to
choose getting more gain instead of a
minimum noise factor
Automatic assembly oriented
Low DC power consumption
BCB layer protection
Chip size: 2.6 x 1.32 x 0.1mm
IN
OUT
+V
-V
W-band amplifier block-diagram
Small signal gain
Main Characteristics
Tamb = +25°C
Symbol
F_op
G_lin
NF
P_1dB
Parameter
Operating frequency
Small signal gain
Noise figure
Output power at 1dB gain compression
Min Typ Max Unit
76
77 GHz
15
dB
4.5
dB
9
dBm
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. DSCHA1077a6013 - 13 Jan 06
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : [phone] - Fax : [phone]