CHA1010-99F Datasheet, PDF (1/10 Pages) United Monolithic Semiconductors – 7-11GHz Low Noise Amplifier

CHA1010-99F
7-11GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA1010-99F is a monolithic two-stage
wide-band low noise amplifier.
It is designed for a wide range of
applications, from professional to commercial
communication systems.
IN
The circuit is manufactured with a pHEMT
process, via holes through the substrate, air
bridges and electron beam gate lithography.
It is available in chip form.
VG VD
OUT
Main Features
■ Broadband performance: 7-11GHz
■ 1.0dB Noise Figure
■ 32dB Linear Gain
■ +5.5dBm Pout at 1dB gain compression
■ DC bias: Vd=5Volt, Id=30mA
■ Chip size 2.57x1.79x0.1mm
-40°C, +25°C, +85°C
Main Electrical Characteristics
Tamb= +25°C. Vd = +5.0V
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
NF Noise Figure
Pout Output Power @1dB compression
Min Typ Max Unit
7
11 GHz
32
dB
1.0
dB
5.5
dBm
Ref. : DSCHA10103333 - 29 Nov 13
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]