CHA1008-99F_15 Datasheet, PDF (1/8 Pages) United Monolithic Semiconductors – 80-105GHz Balanced Low Noise Amplifier

CHA1008-99F
80-105GHz Balanced Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA1008-99F is a broadband,
balanced, four-stage monolithic low noise
amplifier.
IN
It is designed for Millimeter-Wave Imaging
applications and can be use in commercial
OUT
digital radios and wireless LANs.
The circuit is manufactured on a pHEMT
process, 0.10µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
Main Features
■ Broadband performances: 80-105GHz
■ Balanced configuration
■ 16dB linear gain from 80 to 90GHz
■ 5dB noise figure from 80 to 90GHz
■ DC bias: VD=2.5V@ ID=115mA
■ Chip size 3.40x1.60x0.07mm
20
Gain and Noise Figure
18
16
14
12
Gain
NF
10
8
6
4
2
0
78 80 82 84 86 88 90 92 94 96 98 100 102 104 106
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain (from 80 to 90GHz)
NF Noise Figure (from 80 to 90GHz)
Pout Output Power @1dB comp.
Min Typ Max Unit
80
105 GHz
16
dB
5
dB
5
dBm
Ref. : DSCHA10082128 - 07 May 12
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]